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| BFP640F NPN Silicon Germanium RF Transistor* * High gain low noise RF transistor * Provides outstanding performance for a wide range of wireless applications * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz * High maximum stable gain Gms = 23 dB at 1.8 GHz * Gold metallization for extra high reliability 1 2 3 4 XYs 2 1 TSFP-4 to p v ie w 4 3 ACs * 70 GHz fT-Silicon Germanium technology *Short-term description d ir e c tio n o f u n r e e lin g ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP640F Maximum Ratings Parameter Marking R4s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package TSFP-4 Value Unit - Collector-emitter voltage TA > 0C TA 0C V 4 3.7 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 92C VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 50 3 200 150 -65 ... 150 -65 ... 150 mW C mA Junction temperature Ambient temperature Storage temperature 1T is measured on the collector lead at the soldering point to the pcb S 1 Mar-11-2004 BFP640F Thermal Resistance Parameter Symbol RthJS Value 290 Unit Junction - soldering point1) K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 30 mA, VCE = 3 V, puls measured 1For calculation of R thJA please refer to Application Note Thermal Resistance Unit max. 30 100 3 270 V A nA A - typ. 4.5 180 V(BR)CEO ICES ICBO IEBO hFE 4 110 2 Mar-11-2004 BFP640F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 30 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 30 - 40 0.09 0.18 0.5 0.2 - GHz pF Ccb Cce Ceb F dB 0.65 1.2 23 dB G ms - G ma - 12 - dB |S21e|2 IP 3 20.5 10 27.5 - dB dBm P-1dB - 13.5 - 3 Mar-11-2004 BFP640F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 2 -0.0065 fA V V fF ps A V ns - - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2 450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5 A mA V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA V fF V eV K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: 0.22 LBO = 0.28 LEO = 0.22 LCO = LBI = 0.42 LEI = 0.26 LCI = 0.35 34 CBE = 2 CBC = 33 CCE = KBO-EO =0.1 KBO-CO =0.01 KEO-CO =0.11 KCI-EI = 0.2 KBI-CI = KBI-EI = RLBI = RLEI = RLCI = -0.08 -0.05 0.15 0.11 0.13 For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes nH nH nH nH nH nH fF fF fF Valid up to 6GHz 4 Mar-11-2004 BFP640F Collector-base capacitance Ccb= (VCB) f = 1MHz 0.25 Third order Intercept Point IP3=(IC) (Output, ZS=ZL=50) VCE = parameter, f = 1.8 GHz 30 dBm pF 4V 24 21 CCB 0.15 IP3 3V 18 15 0.1 12 9 1V 2V 0.05 6 3 0 0 2 4 6 8 10 V 14 0 0 10 20 30 40 mA 60 VCB IC Transition frequency fT= (IC) f = 1GHz VCE = parameter 45 GHz 3V Power gain Gma, Gms = (IC) VCE = 3V f = parameter 30 dB 0.9 35 30 26 24 fT 2V 25 20 15 10 1V G 22 20 18 16 1.8 2.4 3 4 14 12 10 60 8 0 10 20 30 40 5 6 5 0.5V 0 0 10 20 30 40 mA mA 60 IC IC 5 Mar-11-2004 BFP640F Power Gain Gma, Gms = (f), |S21| = f (f) Power gain Gma, Gms = (VCE) IC = 30mA f = parameter 30 dB 0.9 VCE = 3V, IC = 30mA 55 dB 45 40 35 30 25 20 15 10 5 0 GHz |S21| 24 22 20 1.8 2.4 3 4 5 6 G G Gms Gma 18 16 14 12 10 8 6 4 2 1 2 3 4 6 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 f VCE 6 Mar-11-2004 |
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